1490891238383476738 1
1490891238366699522 1
1490891238346477570 1
1490891238208065537 2
1490891238333145090 1
1490891238392614914 1
  • 1490891238383476738 1
  • 1490891238366699522 1
  • 1490891238346477570 1
  • 1490891238208065537 2
  • 1490891238333145090 1
  • 1490891238392614914 1

    • FCPD InGaAs Photodetector

    • The FCPD is an optoelectronic hybrid integrated by broadband InGaAs photodiode. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. Bandwidth:1GHz, 2.5GHz or customization(maximum 8GHz). Operates on +5V supply voltages. An optical input port is a standard FC(face-contacted) fiber-optic connector. ORF output port is an SMA-compatible connector matched by 50-ohm impedance.
    • ROHS 2.0 certificated.

    Attachment

    Download

    Introduce of FCPD InGaAs Photodetector

    The FCPD is an InGaAs photodetector integrated by a broadband InGaAs photodiode. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. FCPD can provide a bandwidth of 1GHz, 2.5GHz, or customization (maximum 8GHz). The module operates on +5V supply voltages. The optical input port is a standard FC(face-contacted) fiber-optic connector. The RF output port is an SMA-compatible connector matched by 50-ohm impedance.

    FCPD weighs less than 15 grams.

    ROHS 2.0 certificated.

    Features of FCPD InGaAs Photodetector

    • Wide Bandwidth
    • Incorporated Bias-T
    • O/E Hybrid Integrated
    • Low Noise, Broadband
    • SMA Connector

    Applications of the FCPD InGaAs Photodetector

    • Radar Information Processing
    • Electronic Warfare
    • Antenna Measurement

    Product Selection

    Typical & Absolute Maximum Rating
    Parameter Sym. Typ Rating Unit
    Storage temperature range TSTG -45 ～ +85 -55 ～ +100 ℃
    Operating case temperature range TC 25 -40 ～ +70 ℃
    Bias Voltage VR 5 +4.75 ～ +5.25 V
    Optical Input Power Pin 0 5 dBm
    Burn-out Optical Power PB – 13 dBm
    Lead soldering temperature Tp 280（10s） 330（10s） ℃

    Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ )
    Parameter Sym Test Condition Parameter Values Unit
    Wavelength Range λ － 1000 ～ 1650 nm
    Frequency Range － － L Band S Band CM －
    Small Signal Bandwidth f-3dB TC = 22 ± 3℃ 0.03～1 0.03～2.5 0.1～8 GHz
    Responsivity Re VR =+5V,  Pin =1mW λ = 1310 nm ≥ 0.90 ≥ 0.90 ≥ 0.90 A/W
    λ = 1550 nm ≥ 0.90 ≥ 0.90 ≥ 0.90
    Amplitude Flatness A TC =-40～+70 ℃ ≤ ± 1.5 ≤ ±2 dB
    Output VSWR VSWR － ≤ 2 ≤ 2.2 －
    Saturation Optical Power Ps VR = +5 V, λ = 1550 nm 5 dBm
    AC Modulated
    Saturation RF Output Power Pout － -10 dBm
    Dark Current ID － ≤10 nA
    Output Impedance RL － 50 Ω


    Typical Response Curves

    1270265837249204225
    Fig . 1 L- Band FCPD InGaAs Photodetector Frequency Response
    1270265897131282433
    Fig . 2 S-Band FCPD InGaAs Photodetector Frequency Response
    1270265951833395202
    Fig . 3 C- Band FCPD InGaAs Photodetector Frequency Response

    Dimension and Pins ( Unit: mm[inch] ) 

    1270266067852038145

    Ordering Information

    1270266125980897281

    Precautions

    1. The fiber bending radius no less than 20 mm for avoiding fiber damage.
    2. Be sure the fiber coupling facet is clean before connecting it to Opto-circuit.
    3. Suitable ESD protection is required in storage, transportation, and use.

    NEON pioneered RF photonics, microwave photonics, and optical delay line technology to effectively realize the feature of ultra-wideband, high dynamic range, integration of RF system, etc.

    Our main technology design for:

    • Simulate high-speed photoelectric detection
    • Digital photoelectric modulation
    • High-speed photoelectric transceiver components
    • The various fiber-optic transmission facility

    We are happy to provide you with commercial services. If you have any questions or needs about high-speed photodetectors, please feel free to contact us.