FCAMPD Amplified RF InGaAs Photodetector
- The FCAMPD is integrated by a broadband InGaAs photodiode and low noise amplifier. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of a low-noise amplifier is 20~30 dB.
- FCAMPD can provide the bandwidth of 1GHz, 2.5GHz, or customization（maximum 5GHz. Operates on +5V supply voltages. An optical input port is a standard FC(face-contacted) fiber-optic connector. ORF output port is an SMA-compatible connector matched by 50-ohm impedance.
- ROHS 2.0 certificated.
Introduction of FCAMPD Amplified RF InGaAs Photodetector
The FCAMPD is an optoelectronic hybrid integrated by broadband InGaAs photodiode and low noise amplifier. The response wavelength of the InGaAs PIN photodiode is 1000 to 1650nm. The RF gain of a low noise amplifier is 20~30dB.
FCAMPD can provide a bandwidth of 1GHz, 2.5GHz, or customization(maximum 5GHz). The module operates on +5V supply voltages. The optical input port is a standard FC(face-contacted) fiber-optic connector. The RF output port is an SMA compatible connector matched by 50 ohm impedance.
FCAMPD weighs less than 25 grams.
ROHS 2.0 certificated.
Features of FCAMPD Amplified RF InGaAs Photodetector
- Wide Bandwidth
- Incorporated Bias-T
- O/E Hybrid Integrated
- High Gain, Low Noise, Broadband
- SMA Connector
Applications of FCAMPD Amplified RF InGaAs Photodetector
- Radar Information Processing
- Electronic Warfare
- Antenna Measurement
Product Selection
| Typical & Absolute Maximum Rating | ||||
| Parameter | Sym. | Typ | Rating | Unit |
| Storage temperature range | TSTG | -45 ～ +85 | -55 ～ +100 | ℃ |
| Operating case temperature range | TC | 25 | -40 ～ +70 | ℃ |
| Bias Voltage | VR | 5 | +4.75 ～ +5.25 | V |
| Optical Input Power | Pin | 0 | 5 | dBm |
| Burn-out Optical Power | PB | – | 13 | dBm |
| Lead soldering temperature | Tp | 280（10s） | 330（10s） | ℃ |
| Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ ) | |||||||
| Parameter | Sym | Test Condition | Parameter Values | Unit | |||
| Wavelength Range | λ | － | 1000 ～ 1650 | nm | |||
| Frequency Range | － | － | L – Band | S – Band | CM | － | |
| Small Signal Bandwidth | f-3dB | TC = 22 ± 3℃ | 0.03～1 | 0.03～2.5 | 0.1～5 | GHz | |
| Responsivity | Re | VR =+5V, Pin =1mW | λ = 1310 nm | ≥ 0.85 | ≥ 0.90 | ≥ 0.90 | A/W |
| λ = 1550 nm | ≥ 0.90 | ≥ 0.90 | ≥ 0.90 | ||||
| RF Signal Gain | G | － | 30 ±2 | 20 ±2 | 20 ±2 | dB | |
| Amplitude Flatness | A | TC =-40～+70 ℃ | ≤ ± 1.5 | ≤ ± 1.5 | ≤ ± 2 | dB | |
| Output VSWR | VSWR | － | ≤ 2 | ≤ 2 | ≤ ± 2.2 | － | |
| Saturation Optical Power | Ps | VR = +5 V, λ = 1550 nm | 5 | dBm | |||
| AC Modulated | |||||||
| Saturation RF Output Power | Pout | － | 15 | dBm | |||
| Dark Current | ID | － | ≤10 | nA | |||
| Output Impedance | RL | － | 50 | Ω | |||
Typical Response Curves
Dimension and Pins ( Unit: mm[inch] )
Optical Connector：FC(face-contacted) fiber-optic connector
RF Connector: SMA
Ordering Information
Sheet 1:
| Code | Analog Bandwidth |
| L | 0.03 ～ 1 GHz |
| S | 0.03 ～ 2.5 GHz |
| CM | Customization ( ≦ 5GHz ) |
Precautions
- The fiber bending radius no less than 20 mm for avoiding fiber damage.
- Be sure the fiber coupling facet is clean before connecting it to Opto-circuit.
- Suitable ESD protection is required in storage, transportation, and use.
NEON is a supplier of highly engineered commercial and industrial off-the-shelf or customized modules designed for today’s high-speed optical communication network infrastructures and leading-edge defense systems.
We are happy to provide you with commercial services. If you have any questions or needs about high-speed photodetectors, please feel free to contact us.
